On The Effect of Electron-Hole Recombination in Disordered GaAs-Aa1-xALAs Multi-quantum Well Structure

Disordered structure

Authors

  • Uno E. Uno Federal University of Technology, Minna, Nigeria P.M.B 65, Minna, Nigeria
  • Moses E. Emetere Federal University of Technology, Minna, Nigeria P.M.B 65, Minna, Nigeria
  • K.U Isah Federal University of Technology, Minna, Nigeria P.M.B 65, Minna, Nigeria
  • Umaru Ahmadu Faculty of Science, University Malaya, 50603 Kuala Lumpur, Malaysia

DOI:

https://doi.org/10.14331/ijfps.2012.330037

Keywords:

Disordered structure, semiconductor, energy transition and hopping length

Abstract

The disordered electron-hole recombination in multi-quantum well was investigated using analytical method based on the rate equations. The results show extreme broad distribution of the recombination time which depends exponentially on the distances between the recombining excitons. The energies at each localised state shows an energy splitting between the electronic ground state and the first excited state of 0.0038eV.

 

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Author Biography

Umaru Ahmadu, Faculty of Science, University Malaya, 50603 Kuala Lumpur, Malaysia

 

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Published

2012-12-31

How to Cite

Uno, U. E. ., Emetere, M. E. ., Isah , K., & Ahmadu, U. . (2012). On The Effect of Electron-Hole Recombination in Disordered GaAs-Aa1-xALAs Multi-quantum Well Structure: Disordered structure. International Journal of Fundamental Physical Sciences, 2(4), 52-57. https://doi.org/10.14331/ijfps.2012.330037

Issue

Vol. 2 No. 4 (2012): IJFPS

Section

ORIGINAL ARTICLES

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