1.
Fisher CA, Jennings MR, Sharma YK, Sanchez-Fuentes A, Walker D, Gammon PM, Pérez-Tomás A, Thomas SM. On The Schottky Barrier Height Lowering Effect of Ti3SiC2 in Ohmic Contacts to P-Type 4H-SiC: Nanophysics. Int. J. Fundam. Phys. Sci [Internet]. 2014Sep.30 [cited 2024Mar.28];4(3):95-100. Available from: https://www.fundamentaljournals.org/index.php/ijfps/article/view/141