FISHER, C. A. .; JENNINGS, M. R. .; SHARMA, Y. K.; SANCHEZ-FUENTES, A. .; WALKER, D. .; GAMMON, P. M. .; PÉREZ-TOMÁS, A. .; THOMAS, S. M. . On The Schottky Barrier Height Lowering Effect of Ti3SiC2 in Ohmic Contacts to P-Type 4H-SiC: Nanophysics. International Journal of Fundamental Physical Sciences, [S. l.], v. 4, n. 3, p. 95-100, 2014. DOI: 10.14331/ijfps.2014.330071. Disponível em: https://www.fundamentaljournals.org/index.php/ijfps/article/view/141. Acesso em: 26 apr. 2024.