Dynamic tensor properties of silicon with deep impurity levels

Mathematics-Physics

DOI:

https://doi.org/10.14331/ijfps.2011.330010

Keywords:

Simple Properties, Tensor

Abstract

The dynamical tensoproperties of simples Si <Ni>, Si <Gd>, Si <Au> and Si <Mn> at temperatures Т=293К and Т=273К are investigated. The strongly increasing of dynamical tensosensitivity these specified simples at speed of change of pressure P\t >108 Pa/s in comparison with their statistical tensosensitivities is shown.

 

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Published

2011-06-30

How to Cite

Dynamic tensor properties of silicon with deep impurity levels: Mathematics-Physics. (2011). International Journal of Fundamental Physical Sciences, 1(2), 39-41. https://doi.org/10.14331/ijfps.2011.330010

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Section

ORIGINAL ARTICLES