Dynamic tensor properties of silicon with deep impurity levels

Mathematics-Physics

Authors

  • Odiljon Mamatkarimov National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan
  • Ulugbek Tuychiev National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan
  • Ikromjon Tursunov National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan
  • Rustamjon Khamidov National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan

DOI:

https://doi.org/10.14331/ijfps.2011.330010

Keywords:

Simple Properties, Tensor

Abstract

The dynamical tensoproperties of simples Si <Ni>, Si <Gd>, Si <Au> and Si <Mn> at temperatures Т=293К and Т=273К are investigated. The strongly increasing of dynamical tensosensitivity these specified simples at speed of change of pressure P\t >108 Pa/s in comparison with their statistical tensosensitivities is shown.

 

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Author Biography

Rustamjon Khamidov, National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan

 

REFERENCES
Abduraimov A., Zaynabidinov S.Z., Mamatkarimov O.O., Himmatkulov O., 1993.Uzbek Journal of Physics. No 4, 96.
Abduraimov A, Zaynabiddinov S.Z., Tursunov I.G.,Himmatkulov O., 1993. FTS. V.27. Edition 3, 516.
Kireev P.S., 1969. Physics of Semiconductors. –M.: Vysshaya Shkola, 592.

Published

2011-06-30

How to Cite

Mamatkarimov, O. ., Tuychiev, U. ., Tursunov, I. ., & Khamidov, R. . (2011). Dynamic tensor properties of silicon with deep impurity levels: Mathematics-Physics. International Journal of Fundamental Physical Sciences, 1(2), 39-41. https://doi.org/10.14331/ijfps.2011.330010

Issue

Section

ORIGINAL ARTICLES